FDD5612 (ON SEMICONDUCTOR)
МОП-транзистор, N Канал, 18 А, 60 В, 0.036 Ом, 10 В, 2.4 В
The FDD5612 is a 60V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild's the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
- Optimized for use in high frequency DC/DC converters
Области применения
Управление Питанием, Промышленное
Количество Выводов:
3вывод(-ов)
Линейка Продукции:
-
Максимальная Рабочая Температура:
175°C
Напряжение Измерения Rds(on):
10В
Напряжение Истока-стока Vds:
60В
Непрерывный Ток Стока:
18А
Полярность Транзистора:
N Канал
Пороговое Напряжение Vgs:
2.4В
Рассеиваемая Мощность:
42Вт
Сопротивление во Включенном Состоянии Rds(on):
0.036Ом
Стандарты Автомобильной Промышленности:
-
Стиль Корпуса Транзистора:
TO-252
SVHC (Особо Опасные Вещества):
Lead (27-Jun-2018)
RoHS статус:
Y-Ex
