IGP50N60TXKSA1 (INFINEON)
БТИЗ транзистор, 50 А, 2 В, 333 Вт, 600 В, TO-220, 3 вывод(-ов)
The IGP50N60T is a 600V Discrete IGBT Single Transistor without anti-parallel diode. TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
- Lowest Vce (sat) drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
- Very soft, fast recovery anti-parallel emitter controlled diode
- High ruggedness, temperature stable behavior
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
- Comprehensive portfolio in 600V and 1200V for flexibility of design
- High device reliability
- ±20V Gate to emitter voltage (VGE)
- 0.45K/W IGBT thermal resistance, junction to case
- 40K/W IGBT thermal resistance, junction - ambient
Области применения
Управление Питанием, Альтернативаня Энергия, Потребительская Электроника, ОВКВ, Промышленное
DC Ток Коллектора:
50А
Количество Выводов:
3вывод(-ов)
Линейка Продукции:
-
Максимальная Рабочая Температура:
175°C
Напряжение Коллектор-Эмиттер:
600В
Напряжение Насыщения Коллектор-Эмиттер Vce(on):
2В
Рассеиваемая Мощность:
333Вт
Стандарты Автомобильной Промышленности:
-
Стиль Корпуса Транзистора:
TO-220
SVHC (Особо Опасные Вещества):
No SVHC (27-Jun-2018)
RoHS статус:
Да
