FGY75N60SMD (ON SEMICONDUCTOR)
БТИЗ транзистор, 150 А, 1.9 В, 750 Вт, 600 В, Power 247, 3 вывод(-ов)
The FGY75N60SMD is a 1000V Field Stop IGBT with high current capability. This new IGBT is suitable for soft switching applications such as induction cookers and inverterized microwave ovens. FS IGBT provides lower VCE (sat) during on-state and lower switching losses during the turn-off instant. However, since it doesn't include an intrinsic body diode in common with all other types of IGBTs, it is generally packaged together with an additional Fast Recovery Diode (FRD) for most switching applications. This product is general usage and suitable for many different applications.
- Low saturation voltage
- High input impedance
- High speed switching
- Built-in fast recovery diode
Области применения
Управление Питанием, Альтернативаня Энергия
Предупреждения
Market demand for this product has caused an extension in lead times, delivery dates may fluctuate
DC Ток Коллектора:
150А
Количество Выводов:
3вывод(-ов)
Линейка Продукции:
-
Максимальная Рабочая Температура:
175°C
Напряжение Коллектор-Эмиттер:
600В
Напряжение Насыщения Коллектор-Эмиттер Vce(on):
1.9В
Рассеиваемая Мощность:
750Вт
Стандарты Автомобильной Промышленности:
-
Стиль Корпуса Транзистора:
Power 247
SVHC (Особо Опасные Вещества):
Lead (27-Jun-2018)
RoHS статус:
Да
