FM25H20-DG (CYPRESS SEMICONDUCTOR)

The FM25H20-DG is a 2MB non-volatile memory FRAM, employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead and system-level reliability problems caused by serial flash, EEPROM and other non-volatile memories. Unlike serial flash and EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. It is capable of supporting 1014 read/write cycles or 100 million times more write cycles than EEPROM.