HIP2100IBZ (RENESAS)
Двойной драйвер, полумостовой, 9В-14В, 2А, 20нс, SOIC-8
The HIP2100IBZ is a 100V high frequency half bridge N-channel power MOSFET Driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Under-voltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary under-voltage of the high-side supply.
- Drives N-channel MOSFET half bridge
- Bootstrap supply maximum voltage to 114VDC
- On-chip 1R bootstrap diode
- Fast propagation times for multi-MHz circuits
- Drives 1000pF load with rise and fall times typical 10ns
- CMOS input thresholds for improved noise immunity
- Independent inputs for non-half bridge topologies
- No start-up problems
- Outputs unaffected by supply glitches, HS ringing below ground or HS slewing at high dv/dt
- Low power consumption
- Wide supply range
- Supply under-voltage protection
- 3R Driver output resistance
- Near chip scale package footprint, which improves PCB efficiency and has a thinner profile
Области применения
Управление Питанием
Предупреждения
ESD sensitive device, take proper precaution while handling the device.
Задержка Выхода:
20нс
Задержка по Входу:
20нс
Количество Выводов:
8вывод(-ов)
Конфигурация Привода:
Полумост
Линейка Продукции:
-
Максимальная Рабочая Температура:
85°C
Максимальное Напряжение Питания:
14В
Минимальная Рабочая Температура:
-40°C
Минимальное Напряжение Питания:
9В
Пиковый Выходной Ток:
2А
Соответствует Фталатам RoHS:
Будет Указано Позже
Стандарты Автомобильной Промышленности:
-
Стиль Корпуса Привода:
SOIC
SVHC (Особо Опасные Вещества):
No SVHC (07-Jul-2017)
RoHS статус:
Да
