MRF1K50H-TF4 (NXP)
РЧ полевой транзистор, 135 В, 1.667 кВт, 1.8 МГц, 500 МГц, NI-1230H-4S
This high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.
- High drain--source avalanche energy absorption capability
- Unmatched input and output allowing wide frequency range utilization
- Device can be used single--ended or in a push--pull configuration
- Characterized from 30 to 50 V for ease of use
- Suitable for linear application
- Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
- Recommended driver: MRFE6VS25N (25 W)
- Included in NXP product longevity program with assured supply for a minimum of 15 years after launch
Области применения
Космическое, Промышленное, Трансляция Сигнала, Оборона, Военная и Авиационно-космическое, Радиочастотная Связь, Связь и Сеть
Предупреждения
Market demand for this product has caused an extension in lead times, delivery dates may fluctuate
Количество Выводов:
4вывод(-ов)
Корпус РЧ Транзистора:
NI-1230H-4S
Линейка Продукции:
-
Максимальная Рабочая Температура:
150°C
Максимальная Рабочая Частота:
500МГц
Минимальная Рабочая Частота:
1.8МГц
Напряжение Истока-стока Vds:
135В
Непрерывный Ток Стока:
-
Рассеиваемая Мощность:
1.667кВт
SVHC (Особо Опасные Вещества):
No SVHC (27-Jun-2018)
RoHS статус:
Да
