IKB10N60T (INFINEON)
БТИЗ транзистор, 10 А, 2.05 В, 110 Вт, 600 В, TO-263, 3 вывод(-ов)
The IKB10N60T is a Low Loss IGBT in TrenchStop® and field-stop technology with soft, fast recovery anti-parallel emitter controlled HE diode. The TrenchStop® IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of TrenchStop®-cell and field-stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
- Lowest Vce (sat) drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
- Very soft, fast recovery anti-parallel emitter controlled HE diode
- High ruggedness, temperature stable behaviour
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
- Highest efficiency - Low conduction and switching losses
- High device reliability
- 5µs Short-circuit withstand time
- Green product
- Halogen-free
Области применения
Управление Питанием, Альтернативаня Энергия, Потребительская Электроника, ОВКВ, Промышленное
DC Ток Коллектора:
10А
Количество Выводов:
3вывод(-ов)
Линейка Продукции:
-
Максимальная Рабочая Температура:
175°C
Напряжение Коллектор-Эмиттер:
600В
Напряжение Насыщения Коллектор-Эмиттер Vce(on):
2.05В
Рассеиваемая Мощность:
110Вт
Стандарты Автомобильной Промышленности:
-
Стиль Корпуса Транзистора:
TO-263
SVHC (Особо Опасные Вещества):
No SVHC (27-Jun-2018)
RoHS статус:
Да