IHW15N120R3FKSA1 (INFINEON)
БТИЗ транзистор, 15 А, 1.7 В, 254 Вт, 1.2 кВ, TO-247, 3 вывод(-ов)
The IHW15N120R3 is a 1200V Reverse Conducting IGBT with monolithic body diode. Powerful monolithic body diode with low forward voltage is designed for soft commutation only. TRENCHSTOP™ technology applications offers very tight parameter distribution and high ruggedness as well easy parallel switching capability due to positive temperature coefficient in VCE (sat). Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
- Excellent quality
- Lower EMI filtering requirements
- JESD-022 Qualified
- Lowest power dissipation
- Better thermal management
- Surge current capability
- Highest reliability against peak currents
Области применения
Управление Питанием, Микроволны, Альтернативаня Энергия
Предупреждения
Market demand for this product has caused an extension in lead times, delivery dates may fluctuate
DC Ток Коллектора:
15А
Количество Выводов:
3вывод(-ов)
Линейка Продукции:
-
Максимальная Рабочая Температура:
175°C
Напряжение Коллектор-Эмиттер:
1.2кВ
Напряжение Насыщения Коллектор-Эмиттер Vce(on):
1.7В
Рассеиваемая Мощность:
254Вт
Стандарты Автомобильной Промышленности:
-
Стиль Корпуса Транзистора:
TO-247
SVHC (Особо Опасные Вещества):
No SVHC (27-Jun-2018)
RoHS статус:
Да