CY62146EV30LL-45ZSXI (CYPRESS SEMICONDUCTOR)

The CY62146EV30LL-45ZSXI is a 4MB high performance CMOS Static Random Access Memory (SRAM) organized as 256K words by 16-bit. This device features an advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Lifea (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected. The input and output pins are placed in a high impedance state when the device is deselected, outputs are disabled, both byte high enable and byte low enable are disabled or a write operation is in progress. To write to the device, take chip enable and write enable input LOW. If byte low enable is LOW, then data from I/O pins is written into the location specified on the address pins.