SST39LF200A-55-4C-EKE (MICROCHIP)
Флеш память, NOR, Параллельная NOR, 2 Мбит, 128К x 16бит, CFI, TSOP, 48 вывод(-ов)
The SST39LF200A-55-4C-EKE is a 2MB CMOS multi-purpose Flash Memory manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The device writes with a 3 to 3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories. Featuring high-performance word-program, the device provides a typical word-program time of 14µsec. The device uses toggle bit or data# polling to detect the completion of the program or erase operation. To protect against inadvertent write, it has on-chip hardware and software data protection schemes. Designed, manufactured and tested for a wide spectrum of applications, this device is offered with a guaranteed typical endurance of 100000 cycles. Data retention is rated at greater than 100 years.
- Superior reliability
- Low power consumption
- Sector-erase capability - uniform 2K word sectors
- Block-erase capability - Uniform 32K word blocks
- Fast read access time - 55ns
- Latched address and data
- Fast erase and word-program
- Automatic write timing - internal VPP generation
- End-of-write detection
- CMOS I/O compatibility
Области применения
Компьютеры и Периферия, Промышленное, Связь и Сеть, Потребительская Электроника
Время Доступа:
55нс
Количество Выводов:
48вывод(-ов)
Конфигурация Флэш-памяти:
128К x 16бит
Линейка Продукции:
3V Parallel NOR Flash Memories
Максимальная Рабочая Температура:
70°C
Максимальное Напряжение Питания:
3.6В
Минимальная Рабочая Температура:
0°C
Минимальное Напряжение Питания:
3В
Размер Памяти:
2Мбит
Соответствует Фталатам RoHS:
Да
Стиль Корпуса Микросхемы Памяти:
TSOP
Тактовая Частота:
-
Тип Flash Памяти:
Параллельная NOR
Тип Интерфейса ИС:
CFI
SVHC (Особо Опасные Вещества):
No SVHC (27-Jun-2018)
RoHS статус:
Да