SST25VF020B-80-4I-SAE (MICROCHIP)

Главная/Полупроводники - Микросхемы/Память/FLASH/SST25VF020B-80-4I-SAE (MICROCHIP)

Описание
Характеристики

Флеш память, Последовательная NOR, 2 Мбит, 256К x 8бит, 4-проводной, Последовательный, SPI, SOIC

The SST25VF020B-80-4I-SAE is a Serial Peripheral Interface (SPI) Flash Memory with SST proprietary, high-performance CMOS SuperFlash technology. The SST25VF020B devices are enhanced with improved operating frequency and even lower power consumption. The split-gate cell design and thick-oxide tunnelling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VF020B devices significantly improve performance and reliability, while lowering power consumption. The devices write (Program or Erase) with a single power supply of 2.7 to 3.6V for SST25VF020B. The total energy consumed is a function of the applied voltage, current and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies.

Single voltage read and write operation
Serial interface architecture - SPI compatible of mode 0 and mode 3
Superior reliability - 100000 cycles endurance and greater than 100-year data retention
Low power consumption - 10mA (typical) active read current and 5µA (typical) standby current
Flexible erase capability
Fast erase and byte-program
Auto Address Increment (AAI) programming
End-of-write detection
Hold pin (HOLD#) - Suspends a serial sequence to the memory without deselecting the device
Write protection (WP#) - Enables/disables the lock-down function of the status register

Software write protection - Write protection through Block-Protection bits in status register

Области применения

Промышленное

Время Доступа:

Количество Выводов:

8вывод(-ов)

Конфигурация Флэш-памяти:

256К x 8бит

Линейка Продукции:

3V Serial NOR Flash Memories

Максимальная Рабочая Температура:

85°C

Максимальное Напряжение Питания:

3.6В

Минимальная Рабочая Температура:

-40°C

Минимальное Напряжение Питания:

2.7В

Размер Памяти:

2Мбит

Соответствует Фталатам RoHS:

Да

Стиль Корпуса Микросхемы Памяти:

SOIC

Тактовая Частота:

80МГц

Тип Flash Памяти:

Последовательная NOR

Тип Интерфейса ИС:

4-проводной, Последовательный, SPI

SVHC (Особо Опасные Вещества):

No SVHC (27-Jun-2018)

RoHS статус:

Да