S29JL064J70TFI000. (CYPRESS SEMICONDUCTOR)
Флеш память, NOR, Параллельная NOR, 64 Мбит, 8М x 8бит / 4М x 16бит, CFI, TSOP, 48 вывод(-ов)
The S29JL064J70TFI000 is a 64MB CMOS simultaneous Read/Write Flash Memory organized as 4194304 words of 16-bit each or 8388608 bytes of 8-bit each. Word mode data appears on DQ15-DQ0, byte mode data appears on DQ7-DQ0. The device is designed to be programmed in-system with the standard 3VCC supply and can also be programmed in standard EPROM programmers. The device is available with an access time of 70ns. Standard control pins - chip enable (CE#), write enable (WE#) and output enable (OE#) - control normal read and write operations and avoid bus contention issues. The device requires only a single 3V power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.
- Standard configuration
- Data can be continuously read from one bank while executing erase/program functions in another bank
- Zero latency between read and write operations
- Flexible bank architecture
- Read may occur in any of the three banks not being programmed or erased
- Four banks may be grouped by customer to achieve desired bank divisions
- Top and bottom boot sectors in the same device
- Any combination of sectors can be erased
- Manufactured on 0.11µm process technology
- Secured silicon region - Extra 256-byte sector
- Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero
- Compatible with JEDEC standards
- Pinout and software compatible with single-power-supply flash standard
- High performance
- Program time - 7µs/word typical using accelerated programming function
- Ultralow power consumption
- Cycling endurance - 1million cycles per sector typical
- Data retention - 20 years typical
- Supports common flash memory interface
- Erase suspend/erase resume
Области применения
Компьютеры и Периферия, Промышленное, Связь и Сеть, Потребительская Электроника
Предупреждения
Market demand for this product has caused an extension in lead times, delivery dates may fluctuate
Время Доступа:
70нс
Количество Выводов:
48вывод(-ов)
Конфигурация Флэш-памяти:
8М x 8бит / 4М x 16бит
Линейка Продукции:
3V Parallel NOR Flash Memories
Максимальная Рабочая Температура:
85°C
Максимальное Напряжение Питания:
3.6В
Минимальная Рабочая Температура:
-40°C
Минимальное Напряжение Питания:
2.7В
Размер Памяти:
64Мбит
Соответствует Фталатам RoHS:
Да
Стиль Корпуса Микросхемы Памяти:
TSOP
Тактовая Частота:
-
Тип Flash Памяти:
Параллельная NOR
Тип Интерфейса ИС:
CFI
SVHC (Особо Опасные Вещества):
No SVHC (17-Dec-2015)
RoHS статус:
Да
