S25FL512SDPMFI011 (CYPRESS SEMICONDUCTOR)

F2340551
нет данных
 
Флеш память, NOR, Последовательная NOR, 512 Мбит, SPI, SOIC, 16 вывод(-ов)

Документация
Technical Data Sheet EN
Product Change Notice EN

БрендCYPRESS SEMICONDUCTOR НаименованиеS25FL512SDPMFI011 Цена заШтука Страна производстваTaiwan СкладFarnell

Флеш память, NOR, Последовательная NOR, 512 Мбит, SPI, SOIC, 16 вывод(-ов)

The S25FL512SDPMFI011 is a 512MB MirrorBit® Flash Non-Volatile Memory CMOS 3V core with versatile I/O serial peripheral interface with multi-I/O. Traditional SPI 1-bit serial input and output is supported as well as optional 2-bit and 4-bit serial commands. This multiple width interface is called SPI multi-I/O or MIO. In addition, the FL-S family adds support for double data rate (DDR) read commands for SIO, DIO and QIO that transfer address and read data on both edges of the clock. The eclipse architecture features a page programming buffer that allows up to 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. By using FL-S device at the higher clock rates supported, with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically.
  • SPI Clock polarity and phase modes 0 and 3
  • Serial command set and footprint compatible with S25FL-A, S25FL-K and S25FL-P SPI families
  • Multi I/O Command set and footprint compatible with S25FL-P SPI family
  • Common Flash Interface (CFI) data for configuration information
  • Quad-input page programming (QPP) for slow clock systems
  • Cycling endurance - 100000 program-erase cycles on any sector typical
  • Data retention - 20 years data retention typical
  • Status register bits to control protection against program/erase of a contiguous range of sectors
  • Advanced sector protection
  • Spansion® 65nm MirrorBit technology with Eclipse™ Architecture

Области применения

Компьютеры и Периферия, Промышленное, Связь и Сеть, Потребительская Электроника

Время Доступа:
-
Количество Выводов:
16вывод(-ов)
Конфигурация Флэш-памяти:
-
Линейка Продукции:
3V Serial NOR Flash Memories
Максимальная Рабочая Температура:
85°C
Максимальное Напряжение Питания:
3.6В
Минимальная Рабочая Температура:
-40°C
Минимальное Напряжение Питания:
2.7В
Размер Памяти:
512Мбит
Соответствует Фталатам RoHS:
Да
Стиль Корпуса Микросхемы Памяти:
SOIC
Тактовая Частота:
66МГц
Тип Flash Памяти:
Последовательная NOR
Тип Интерфейса ИС:
SPI
SVHC (Особо Опасные Вещества):
No SVHC (17-Dec-2015)
RoHS статус:
Да