FM33256B-G (CYPRESS SEMICONDUCTOR)

The FM33256B-G is a 256kB device integrates F-RAM Memory with the most commonly needed functions for processor-based systems. Major features include nonvolatile memory, real time clock, low-VDD reset, watchdog timer, nonvolatile event counter, lockable 64-bit serial number area and general purpose comparator that can be used for a power-fail interrupt or any other purpose. It is a nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead and system-level reliability problems caused by other nonvolatile memories. It is capable of supporting 10?? read/write cycles or 100 million times more write cycles than EEPROM. The real time clock provides time and date information in BCD format. It can be permanently powered from an external backup voltage source, either a battery or a capacitor.