FM25C160B-G (CYPRESS SEMICONDUCTOR)

The FM25C160B-G is a 16kbit Non-volatile Memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead and system level reliability problems caused by serial flash, EEPROM and other non-volatile memories. Unlike serial flash and EEPROM, this memory performs write operations at bus speed. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition the product offers substantial write endurance compared with other non-volatile memories.