IS43LR32160C-6BLI (INTEGRATED SILICON SOLUTION (ISSI))

F2409138
нет данных
 
DRAM, 16М х 32бита, 6нс, интерфейс LVCMOS, BGA-90

Документация
Technical Data Sheet EN

БрендINTEGRATED SILICON SOLUTION (ISSI) НаименованиеIS43LR32160C-6BLI Цена заШтука Страна производстваTaiwan СкладFarnell

DRAM, 16М х 32бита, 6нс, интерфейс LVCMOS, BGA-90

The IS43LR32160C-6BLI is a 536870912-bit CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4194304 words x 32-bit. This product uses a double-data-rate architecture to achieve high-speed operation. The data input/output signals are transmitted on a 32-bit bus. The double data rate architecture is essentially a 2N pre-fetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bit pre-fetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS.
  • JEDEC standard 1.8V power supply
  • 4-Internal banks for concurrent operation
  • MRS cycle with address key programs
  • Fully differential clock inputs
  • All inputs except data & DM are sampled at the rising edge of the system clock
  • Data I/O transaction on both edges of data strobe
  • Bidirectional data strobe per byte of data
  • DM for write masking only
  • Edge aligned data and data strobe output
  • Center aligned data and data strobe input
  • 64ms Refresh period
  • Auto and self refresh
  • Concurrent auto pre-charge
  • Maximum clock frequency up to 200MHz
  • Maximum data rate up to 400Mbps/pin
  • Power saving support
  • Status register read
  • LVCMOS compatible inputs/outputs

Области применения

Компьютеры и Периферия, Промышленное, Связь и Сеть, Потребительская Электроника

Время Доступа:
6нс
Количество Выводов:
90вывод(-ов)
Конфигурация памяти DRAM:
16М x 32бит
Линейка Продукции:
-
Максимальная Рабочая Температура:
85°C
Минимальная Рабочая Температура:
-40°C
Размер Страницы:
-
Соответствует Фталатам RoHS:
Да
Стиль Корпуса Микросхемы Памяти:
BGA
Тип Интерфейса ИС:
LVCMOS
SVHC (Особо Опасные Вещества):
No SVHC (12-Jan-2017)
RoHS статус:
Да