FDP18N50 (ON SEMICONDUCTOR)
МОП-транзистор, N Канал, 18 А, 500 В, 0.265 Ом, 10 В, 5 В
The FDP18N50 is a 500V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode's reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100ns and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200ns and 4.5V/ns respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET's body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. This product is general usage and suitable for many different applications.
- Low gate charge
- 100% Avalanche tested
Области применения
Управление Питанием, Освещение
Предупреждения
Market demand for this product has caused an extension in lead times, delivery dates may fluctuate
Количество Выводов:
3вывод(-ов)
Линейка Продукции:
-
Максимальная Рабочая Температура:
150°C
Напряжение Измерения Rds(on):
10В
Напряжение Истока-стока Vds:
500В
Непрерывный Ток Стока:
18А
Полярность Транзистора:
N Канал
Пороговое Напряжение Vgs:
5В
Рассеиваемая Мощность:
235Вт
Сопротивление во Включенном Состоянии Rds(on):
0.265Ом
Стандарты Автомобильной Промышленности:
-
Стиль Корпуса Транзистора:
TO-220
SVHC (Особо Опасные Вещества):
Lead (27-Jun-2018)
RoHS статус:
Да
