IKW30N60TFKSA1 (INFINEON)

F1471748
нет данных
 
БТИЗ транзистор, универсальный, 60 А, 2.05 В, 187 Вт, 600 В, TO-247, 3 вывод(-ов)

Документация
Technical Data Sheet EN
Application Note EN
  Simulation Model EN

БрендINFINEON НаименованиеIKW30N60TFKSA1 Цена заШтука Страна производстваGermany СкладFarnell

БТИЗ транзистор, универсальный, 60 А, 2.05 В, 187 Вт, 600 В, TO-247, 3 вывод(-ов)

The IKW30N60T is a 600V Discrete IGBT with very soft, fast recovery anti-parallel emitter controlled diode. TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
  • Lowest Vce (sat) drop for lower conduction losses
  • Low switching losses
  • Easy to parallel switching capability due to positive temperature coefficient in Vce (sat)
  • High ruggedness, temperature stable behaviour
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution
  • Highest efficiency
  • Low conduction and switching losses

Области применения

Управление Питанием, Альтернативаня Энергия, Промышленное

Предупреждения

Market demand for this product has caused an extension in lead times, delivery dates may fluctuate
DC Ток Коллектора:
60А
Количество Выводов:
3вывод(-ов)
Линейка Продукции:
-
Максимальная Рабочая Температура:
175°C
Напряжение Коллектор-Эмиттер:
600В
Напряжение Насыщения Коллектор-Эмиттер Vce(on):
2.05В
Рассеиваемая Мощность:
187Вт
Стандарты Автомобильной Промышленности:
-
Стиль Корпуса Транзистора:
TO-247
SVHC (Особо Опасные Вещества):
No SVHC (27-Jun-2018)
RoHS статус:
Да