HGTG30N60B3D.. (ON SEMICONDUCTOR)

F1838984
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БТИЗ транзистор, 60 А, 1.9 В, 208 Вт, 600 В, TO-247, 3 вывод(-ов)

Документация
Technical Data Sheet EN

БрендON SEMICONDUCTOR НаименованиеHGTG30N60B3D.. Цена заШтука Страна производстваUnited States СкладFarnell

БТИЗ транзистор, 60 А, 1.9 В, 208 Вт, 600 В, TO-247, 3 вывод(-ов)

The HGTG30N60B3D is a 600V N-channel IGBT with anti-parallel hyper fast diode. The UFS series MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25° C and 150° C. The diode used in anti-parallel with the IGBT is the RHRP3060. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
  • 90ns at TJ = 150°C Fall time

Области применения

Привод Двигателя и Управление, Управление Питанием, Промышленное

Предупреждения

Market demand for this product has caused an extension in lead times, delivery dates may fluctuate
DC Ток Коллектора:
60А
Количество Выводов:
3вывод(-ов)
Линейка Продукции:
-
Максимальная Рабочая Температура:
150°C
Напряжение Коллектор-Эмиттер:
600В
Напряжение Насыщения Коллектор-Эмиттер Vce(on):
1.9В
Рассеиваемая Мощность:
208Вт
Стандарты Автомобильной Промышленности:
-
Стиль Корпуса Транзистора:
TO-247
SVHC (Особо Опасные Вещества):
Lead (27-Jun-2018)
RoHS статус:
Да
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