HGTG12N60A4D (ON SEMICONDUCTOR)

F1057677
нет данных
 
БТИЗ транзистор, 54 А, 2.7 В, 167 Вт, 600 В, TO-247, 3 вывод(-ов)

Документация
Technical Data Sheet EN
Product Change Notice EN

БрендON SEMICONDUCTOR НаименованиеHGTG12N60A4D Цена заШтука Страна производстваSouth Korea СкладFarnell

БТИЗ транзистор, 54 А, 2.7 В, 167 Вт, 600 В, TO-247, 3 вывод(-ов)

The HGTG12N60A4D is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
  • 70ns at TJ = 125°C Fall time

Области применения

Привод Двигателя и Управление, Управление Питанием, Промышленное

Предупреждения

Market demand for this product has caused an extension in lead times, delivery dates may fluctuate
DC Ток Коллектора:
54А
Количество Выводов:
3вывод(-ов)
Линейка Продукции:
-
Максимальная Рабочая Температура:
150°C
Напряжение Коллектор-Эмиттер:
600В
Напряжение Насыщения Коллектор-Эмиттер Vce(on):
2.7В
Рассеиваемая Мощность:
167Вт
Стандарты Автомобильной Промышленности:
-
Стиль Корпуса Транзистора:
TO-247
SVHC (Особо Опасные Вещества):
Lead (27-Jun-2018)
RoHS статус:
Да