FGL40N120ANTU (ON SEMICONDUCTOR)

F1495137
нет данных
 
БТИЗ транзистор, 64 А, 3.2 В, 500 Вт, 1.2 кВ, TO-264, 3 вывод(-ов)

Документация
Technical Data Sheet EN
Product Change Notice EN

БрендON SEMICONDUCTOR НаименованиеFGL40N120ANTU Цена заШтука Страна производстваSouth Korea СкладFarnell

БТИЗ транзистор, 64 А, 3.2 В, 500 Вт, 1.2 кВ, TO-264, 3 вывод(-ов)

The FGL40N120ANTU is a 1200V NPT IGBT. It is in a non-punch through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
  • Low saturation voltage
  • High input impedance
  • High speed switching

Области применения

Управление Питанием, Альтернативаня Энергия

Предупреждения

Market demand for this product has caused an extension in lead times, delivery dates may fluctuate
DC Ток Коллектора:
64А
Количество Выводов:
3вывод(-ов)
Линейка Продукции:
-
Максимальная Рабочая Температура:
150°C
Напряжение Коллектор-Эмиттер:
1.2кВ
Напряжение Насыщения Коллектор-Эмиттер Vce(on):
3.2В
Рассеиваемая Мощность:
500Вт
Стандарты Автомобильной Промышленности:
-
Стиль Корпуса Транзистора:
TO-264
SVHC (Особо Опасные Вещества):
No SVHC (27-Jun-2018)
RoHS статус:
Да
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