IDD10SG60C (INFINEON)
Карбидокремниевый диод Шоттки, Серия thinQ 3G 600V, Одиночный, 600 В, 10 А, 16 нКл, TO-252
The IDD10SG60C is a thinQ!™3rd generation 600V SiC Schottky Diode features the industry's lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. It is third generation Infineon Sic diode. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level so called diffusion soldering. It offers benchmark switching behaviour, no reverse recovery/no forward recovery and high surge current capability. It is used in motor drives, solar applications, UPS, SMPS (CCM, PFC), server, telecom, lightning, PC power, AC-DC applications.
- Revolutionary semiconductor material-silicon carbide
- Temperature independent switching behaviour
- Pb-free lead plating
- Qualified according to JEDEC for target applications
- Breakdown voltage tested at 20mA
- Optimized for high temperature operation
- Lowest Figure of Merit QC/IF
- System efficiency improvement compared to Si diodes
- Reduced cooling requirements
- Enabling higher frequency/increased power density
- Higher system reliability due to lower operating temperature
- Reduced EMI
- High operating temperature (Tj max 175°C)
Области применения
Потребительская Электроника, Привод Двигателя и Управление, Освещение, Связь и Сеть, Компьютеры и Периферия
Количество Выводов:
3 Вывода
Конфигурация Диода:
Одиночный
Линейка Продукции:
Серия thinQ 3G 600V
Максимальная Температура Перехода Tj:
175°C
Максимальное Значение Напряжения Vrrm:
600В
Полный Емкостной Заряд Qc:
16нКл
Постоянный Прямой Ток If:
10А
Стандарты Автомобильной Промышленности:
-
Стиль Корпуса Диода:
TO-252
SVHC (Особо Опасные Вещества):
No SVHC (27-Jun-2018)
RoHS статус:
Да
