FOD3182 (ON SEMICONDUCTOR)

F2083108
нет данных
 
Оптопара, с драйвером затвора на выходе, 1 канал, DIP, 8 вывод(-ов), 5 кВ

Документация
Technical Data Sheet EN

БрендON SEMICONDUCTOR НаименованиеFOD3182 Цена заШтука Страна производстваThailand СкладFarnell

Оптопара, с драйвером затвора на выходе, 1 канал, DIP, 8 вывод(-ов), 5 кВ

The FOD3182 is a 3A output current high-speed MOSFET Gate Drive Optocoupler consists of an aluminium gallium arsenide (AlGaAs) LED (LED) optically coupled to a CMOS detector with PMOS and NMOS output power transistors integrated circuit power stage. It is ideally suited for high frequency driving of power MOSFETS used in Plasma Display Panels (PDPs), motor control inverter applications and high performance DC-DC converters. The device is packaged in an 8-pin dual in-line housing compatible with 260°C reflow processes for lead free solder compliance. High noise immunity characterized by 50kV/µs (typical) common mode rejection. Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output). Undervoltage lockout protection (UVLO) with hysteresis, optimized for driving MOSFETs.
  • 3A Minimum peak output current
  • Fast switching speed
  • 210ns maximum propagation delay
  • 65ns maximum pulse width distortion
  • Fast output rise/fall time
  • Offers lower dynamic power dissipation
  • 250kHz maximum switching speed
  • Wide Vcc operating range from 10 to 30V
  • 5000Vrms for one minute Isolation
  • Minimum creepage distance of 8mm
  • Minimum clearance distance of 10mm to 16mm (option TV or TSV)
  • Minimum insulation thickness of 0.5mm
  • RDS (ON) of 1.5R (typical) offers lower power dissipation
  • 10kV/m Minimum common mode rejection

Области применения

Потребительская Электроника, Обработка Сигнала, Управление Питанием

Количество Выводов:
8вывод(-ов)
Количество Каналов:
1 канал
Линейка Продукции:
-
Напряжение Изоляции:
5кВ
Стиль Корпуса Оптопары:
DIP
SVHC (Особо Опасные Вещества):
No SVHC (27-Jun-2018)
RoHS статус:
Да